GaAs-based triangular barrier photodiodes with embedded type-II GaSb quantum dots

被引：2

作者：

Vitushinskiy, Pavel ^{[1
]}

Ohmori, Masato ^{[1
]}

Kuroda, Tomohiro ^{[1
]}

Noda, Takeshi ^{[2
]}

Kawazu, Takuya ^{[2
]}

Sakaki, Hiroyuki ^{[1
]}

机构：

[1] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; PHOTO-DIODE;

D O I：

10.7567/APEX.9.052002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate GaAs-based triangular barrier photodiodes (TBPs), in which type-II GaSb quantum dots (QDs) are embedded in the vertex part of their triangular barriers. Their current-voltage characteristics and photo-responses are studied at low temperatures to show that GaSb QDs enhance the number and lifetime of photo-generated holes that are trapped by QDs in the barrier, resulting in the increase in the electron current around positively charged QDs. An extremely high responsivity of 10(9)A/W is achieved. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

共 17 条

[1] THE STEADY-STATE OPTICAL-RESPONSE OF THE HOMOJUNCTION TRIANGULAR BARRIER PHOTO-DIODE [J].

BARNARD, JA ;

NAJJAR, FE ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1396-1403

[2] Efficient single photon detection by quantum dot resonant tunneling diodes [J].

Blakesley, JC ;

See, P ;

Shields, AJ ;

Kardynal, BE ;

Atkinson, P ;

Farrer, I ;

Ritchie, DA .

PHYSICAL REVIEW LETTERS, 2005, 94 (06) :1-4

[3] THEORY OF A MODULATED BARRIER PHOTO-DIODE [J].

CHEN, CY .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :979-981

[4] MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J].

CHEN, CY ;

CHO, AY ;

GARBINSKI, PA ;

BETHEA, CG ;

LEVINE, BF .

APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342

[5] MEASUREMENTS OF COULOMB BLOCKADE WITH A NONINVASIVE VOLTAGE PROBE [J].

FIELD, M ;

SMITH, CG ;

PEPPER, M ;

RITCHIE, DA ;

FROST, JEF ;

JONES, GAC ;

HASKO, DG .

PHYSICAL REVIEW LETTERS, 1993, 70 (09) :1311-1314

[6] 450 meV hole localization in GaSb/GaAs quantum dots [J].

Geller, M ;

Kapteyn, C ;

Müller-Kirsch, L ;

Heitz, R ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2706-2708

[7] Detecting terahertz current fluctuations in a quantum point contact using a nanowire quantum dot [J].

Gustavsson, S. ;

Shorubalko, I. ;

Leturcq, R. ;

Ihn, T. ;

Ensslin, K. ;

Schoen, S. .

PHYSICAL REVIEW B, 2008, 78 (03)

[8] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].

HATAMI, F ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BOHRER, J ;

HEINRICHSDORFF, F ;

BEER, M ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

IVANOV, SV ;

MELTSER, BY ;

KOPEV, PS ;

ALFEROV, ZI .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658

[9] Growth of GaSb quantum dots on GaAs (311)A [J].

Kawazu, Takuya ;

Noda, Takeshi ;

Mano, Takaaki ;

Sakuma, Yoshiki ;

Sakaki, Hiroyuki .

JOURNAL OF CRYSTAL GROWTH, 2013, 378 :475-479

[10] Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection [J].

Li, H. W. ;

Kardynal, B. E. ;

See, P. ;

Shields, A. J. ;

Simmonds, P. ;

Beere, H. E. ;

Ritchie, D. A. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

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