Design, Fabrication, and Characterization of 1.5 MΩcm2, 800 V 4H-SiC n-type Schottky Barrier Diodes

被引：7
作者：
Furno, M
Bonani, F
Ghione, G
Ferrero, S
Porro, S
Mandracci, P
Scaltrito, L
Perrone, D
Richieri, G
Merlin, L
机构：
[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy
[2] Politecn Torino, Dipartimento Fis, Turin, Italy
[3] XLab, Mat & Microsyst Lab, Turin, Italy
[4] IRCI Int Rectifier Corp Italia, I-10071 Turin, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
4H-SiC power devices; Schottky diode; fabrication; characterization; physic based simulation; temperature modeling;
D O I：
10.4028/www.scientific.net/MSF.483-485.941
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs.. temperature. Simulations provided also useful data for the assessment of the device process technology.
引用
收藏
页码：941 / 944
页数：4
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