NH3 Sensing Characteristics of Nano-WO3 Thin Films Deposited on Porous Silicon

被引：28
作者：
Sun, Fengyun [1 ]
Hu, Ming [1 ]
Sun, Peng [1 ]
Zhang, Jie [1 ]
Liu, Bo [1 ]
机构：
[1] Tianjin Univ, Sensit Mat & Sensros Lab, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 11期
关键词：
Nano-Tungsten Trioxide (WO3) Thin Films; Porous Silicon; NH3 Sensing Characteristics; Room Temperature; NO2-SENSING PROPERTIES; SENSOR;
D O I：
10.1166/jnn.2010.2815
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electro-chemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed.
引用
收藏
页码：7739 / 7742
页数：4
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