A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

被引：157

作者：

Jo, Seo-Hyeon ^{[1
]}

Kang, Dong-Ho ^{[1
]}

Shim, Jaewoo ^{[1
]}

Jeon, Jaeho ^{[2
]}

Jeon, Min Hwan ^{[2
]}

Yoo, Gwangwe ^{[1
]}

Kim, Jinok ^{[1
]}

Lee, Jaehyeong ^{[1
]}

Yeom, Geun Young ^{[2
]}

Lee, Sungjoo ^{[2
]}

Yu, Hyun-Yong ^{[3
]}

Choi, Changhwan ^{[4
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; WSE2; GRAPHENE; PHOTORESPONSE; GROWTH; MONO;

D O I：

10.1002/adma.201600032

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

引用

收藏

页码：4824 / 4831

页数：8

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