Multivalley electron population dynamics on the Ge(111): As surface

被引:19
|
作者
Rettenberger, A [1 ]
Haight, R [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.76.1912
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electrons excited to energies well above the conduction band minimum of Ge are observed to populate valleys centered at the <(Gamma)over bar> and (M) over bar points of the Brillouin zone on the As-terminated Ge(111) surface. The valley centered at (M) over bar is a surface resonance, located 0.3 eV above the Ge conduction band minimum. The subpicosecond population dynamics are followed directly with harmonic laser photoemission. The time evolution of the excited electron gas temperature was measured and a cooling rate was determined.
引用
收藏
页码:1912 / 1915
页数:4
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