Plasma and UV assisted Rapidcuring™ of low-k materials

被引：0

作者：

Waldfried, C ^{[1
]}

Margolis, A ^{[1
]}

Escorcia, O ^{[1
]}

Han, Q ^{[1
]}

Albano, R ^{[1
]}

Berry, I ^{[1
]}

机构：

[1] Axcelis Technol Inc, Rockville, MD 20855 USA

来源：

RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS | 2002年 / 2002卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The mechanism and process conditions of a plasma and/or UV assisted curing method for low-k materials (RapidCure(TM)) that may be used for the advanced manufacturing of integrated circuits are presented. Analytical results from FTIR, XPS, TDS, and TEGC/MS are correlated to electrical and mechanical film properties, such as dielectric constant, film hardness and Young's modulus data. The improved low-k film properties that may be achieved with the RapidCure(TM) technology, as well as general process conditions that are applicable for a number of porous low-k materials (i.e., inorganics and hybrids), are discussed.

引用

页码：53 / 61

页数：9

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