Silicon nanowire solar cells with a-Si hetero-junction showing 7.3% efficiency

被引:2
作者
Falk, Fritz [1 ]
Jia, Guobin [1 ]
Andrae, Gudrun [1 ]
Sill, Ingo [1 ]
Petkov, Nikolay
机构
[1] Inst Photon Technol, D-07745 Jena, Germany
来源
NEXT GENERATION (NANO) PHOTONIC AND CELL TECHNOLOGIES FOR SOLAR ENERGY CONVERSION II | 2011年 / 8111卷
关键词
Solar cells; silicon; nanowires; hetero-junction; CRYSTALLINE SILICON; SINGLE; HETEROJUNCTION; GOLD;
D O I
10.1117/12.897369
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Core-shell silicon nanowire (SiNW) solar cells with an a-Si heterojunction were prepared on SiNW arrays, which were etched into n-type silicon wafers or into n-doped multicrystalline silicon thin films on glass substrates. A stack of intrinsic and p-doped hydrogenated a-Si was deposited as a shell around the SiNWs by PECVD, acting as a hetero-emitter of the solar cells. Finally a TCO layer consisting of aluminum doped zinc oxide was deposited on top of the a-Si by atomic layer deposition. In a mesa-structured solar cell (area 7 mm(2)) an open circuit voltage of 476 mV and an efficiency of 7.3% were achieved under AM 1.5 illumination. Electron beam induced current measurements show clear evidence that most of the photo-current comes from the thin SiNW layer.
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页数:8
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