Integrated magnetic field sensor based on magnetoresistive spin valve structures

被引:10
作者
Prieto, JL
Rouse, N
Todd, NK
Morecroft, D
Wolfman, J
Evetts, JE
Blamire, MG
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[2] Telcon Ltd, Crawley RH10 2PY, W Sussex, England
基金
英国工程与自然科学研究理事会;
关键词
magnetic sensor; spin valve; magnetoresistance; current sensor;
D O I
10.1016/S0924-4247(01)00703-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new integrated magnetic sensor, which is based on a micro-patterned spin valve bridge design, is described in this paper. The main advantage of the design is that an adjacent soft magnetic layer guides the magnetic flux, allowing a balanced bridge sensor to be sensitive to the direction of the external magnetic field. This new design avoids some of the additional circuitry and processing steps required in previous spin valve-based field sensors. We report a significant increase in the device sensitivity (similar to 15 mV/(VxOe)), even in non-optimised prototype devices compared to other commercially available lake NVE (15 mV/(V(.)Oe)). (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:64 / 68
页数:5
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