A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact

被引：7
|
作者：
Fujishima, N [1 ]
Sugi, A [1 ]
Suzuki, T [1 ]
Kajiwara, S [1 ]
Matsubara, K [1 ]
Nagayasu, Y [1 ]
Salama, CAT [1 ]
机构：
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
来源：
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年
关键词：
D O I：
10.1109/ISPSD.2001.934576
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, and characterized. The TLPM/S is formed along the sidewalls of the trenches so as to reduce the device pitch and realize very small on-resistance per unit area. The fabricated TLPM/S, whose device pitch is 3.6 gm, shows a specific on-resistance of 72 m Omega -mm(2) for a breakdown voltage of 73 V, which is close to the estimated silicon limit for this voltage class of devices.
引用
收藏
页码：143 / 146
页数：4
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