Characterization of excess carbon in cubic SiC films by infrared absorption

被引：63

作者：

Sun, Y ^{[1
]}

Miyasato, T

Wigmore, JK

机构：

[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Fukuoka 8408502, Japan

[2] Univ Lancaster, Sch Phys & Chem, Lancaster, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 06期

关键词：

D O I：

10.1063/1.369686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of excess carbon in cubic SiC films was investigated using infrared absorption spectroscopy of modes which were optically activated by defect-induced strain in the film. The results show that the excess carbon which is formed interstitially in the region of SiC grain boundaries as an interstitial phase, consists of both crystalline and amorphous phases. The crystalline phase declines and the amorphous phase grows when the growth temperature is increased above 700 degrees C. (C) 1999 American Institute of Physics. [S0021-8979(99)00106-1].

引用

页码：3377 / 3379

页数：3

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