ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells

被引：2

作者：

Amin, N ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915928

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

N-2 doped ZnTe was introduced at the back contact of 1 mum-CdTe absorbers to reduce the carrier recombination at the back contact of CdS/CdTe/Carbon/Ag configuration solar cells. ZnTe films were grown by MBE on GaAs and Corning glass substrates in order to investigate the characteristics of the films. Epitaxial growth of ZnTe was found on GaAs substrates and hole concentration of 8x10(18)/cm(3) with a resistivity of 0.045 Omega -cm was achieved when nitrogen doping was carried out by plasma source. On the contrary, poly-crystalline ZnTe films were grown on Corning glass and CdTe thin films. Both dark and photoconductivity of ZnTe films increased to 1.43x10(-5) S/cm and 1.41x10(-4) S/cm respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films were inserted with different thickness to Close-Spaced Sublimation (CSS) grown 1 mum-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm(2), FF: 0.49, area: 0.5 cm(2)) was achieved for 0.2 mum-ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu doped C/Ag.

引用

页码：650 / 653

页数：4

共 4 条

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