A pathway for ZnO p-type transformation and its performance in solar cells

被引：39

作者：

Zhao, Yanfang ^{[1
,2
]}

Yang, Haiying ^{[2
,3
]}

Xiao, Yuanbin ^{[1
,2
]}

Yang, Ping ^{[2
]}

机构：

[1] Jiangsu Univ Technol, Sch Mech Engn, Changzhou 213001, Peoples R China

[2] Jiangsu Univ, Sch Mech Engn, Lab Adv Design Mfg & Reliabil MEMS NEMS OEDS, Zhenjiang 212013, Jiangsu, Peoples R China

[3] Texas A&M Univ, Coll Engn, Dept Mat Sci & Engn, College Stn, TX 77843 USA

来源：

SOLAR ENERGY | 2022年 / 231卷

关键词：

p-Type ZnO; Magnetron sputtering; Sputtering atmosphere; Solar cell; Photoelectric conversion rate; OPTICAL-PROPERTIES; THIN-FILMS; DEPOSITION;

D O I：

10.1016/j.solener.2021.11.061

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Aiming at the breakthrough of ZnO in solar cells, we investigate the theoretical rationality and experimental operability of its structural components. In this paper, First Principle Calculation is implemented to achieve the optimum doping ratio for ZnO p-type transformation. Then, Al-N co-doped ZnO films are prepared by magnetron sputtering. The quality of p-type ZnO films are controlled by changing the ratio of N2O to Ar in the sputtering atmosphere. Results shown that the p-type ZnO films with excellent photoelectrical properties can be successfully obtained in the condition of N2O:Ar = 1: 4, where the resistivity is as low as rho = 3.678 x 10(-5) Omega.cm, the carrier concentration isN = 1.3066 x 10(21) cm(-3), the average transmittance of the visible region is about 90%. In addition, we first explore the feasibility on the fabrication of p-type Al-N co-doped ZnO/n-type Al-doped ZnO homojunction and its application in solar cell.

引用

页码：889 / 896

页数：8

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