Rate equation analysis of hydrogen uptake on Si (100) surfaces

被引：13

作者：

Inanaga, S ^{[1
]}

Rahman, F ^{[1
]}

Khanom, F ^{[1
]}

Namiki, A ^{[1
]}

机构：

[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 05期

关键词：

D O I：

10.1116/1.2013320

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the uptake process of H on Si (100) surfaces by means of rate-equation analysis. Flowers' quasiequilibrium model for adsorption and desorption of H [M. C. Flowers, N. B. H. Jonathan, A. Morris, and S. Wright, Surf. Sci. 396, 227 (1998)] is extended so that in addition to the H abstraction (ABS) and beta(2)-channel thermal desorption (TD) the proposed rate equation further includes the adsorption-induced desorption (AID) and beta(1)-TD. The validity of the model is tested by the experiments of ABS and AID rates in the reaction system H+D/Si (100). Consequently, we find it can well reproduce the experimental results, validating the proposed model. We find the AID rate curve as a function of surface temperature T, exhibits a clear anti-correlation with the bulk dangling bond density versus T, curve reported in the plasma-enhanced chemical vapor deposition (CVD) for amorphous Si films. The significance of the H chemistry in plasma-enhanced CVD is discussed. (c) 2005 American Vacuum Society.

引用

页码：1471 / 1478

页数：8

共 50 条

[1] Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces [J].

Agarwal, S ;

Sriraman, S ;

Takano, A ;

van de Sanden, MCM ;

Aydil, ES ;

Maroudas, D .

SURFACE SCIENCE, 2002, 515 (01) :L469-L474

[2] Effects of addition of SiF4 during growth of nanocrystalline silicon films deposited at 100°C by plasma-enhanced chemical vapor deposition [J].

Ali, AM ;

Inokuma, T ;

Kurata, Y ;

Hasegawa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10) :6047-6053

[3]

[Anonymous], 1988, PHYS SURFACES

[4] STRUCTURE OF THE H-SATURATED SI(100) SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (26) :3325-3328

[5] H atom abstraction of D adsorbed on Si(100): dynamical evidence for an Eley-Rideal mechanism [J].

Buntin, SA .

CHEMICAL PHYSICS LETTERS, 1997, 278 (1-3) :71-76

[6] Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D [J].

Buntin, SA .

JOURNAL OF CHEMICAL PHYSICS, 1996, 105 (05) :2066-2075

[7] Dynamics of the H atom abstraction of D adsorbed on Si(100) [J].

Buntin, SA .

JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (04) :1601-1609

[8] Kinetics of D abstraction with H atoms from the monodeuteride phase on Si(100) surfaces [J].

Dinger, A ;

Lutterloh, C ;

Küppers, J .

CHEMICAL PHYSICS LETTERS, 1999, 311 (3-4) :202-208

[9] Interaction of hydrogen atoms with Si(111) surfaces:: Adsorption, abstraction, and etching [J].

Dinger, A ;

Lutterloh, C ;

Küppers, J .

JOURNAL OF CHEMICAL PHYSICS, 2001, 114 (12) :5338-5350

[10] A quasi-equilibrium model for the uptake kinetics of hydrogen atoms on Si(100) [J].

Flowers, MC ;

Jonathan, NBH ;

Morris, A ;

Wright, S .

SURFACE SCIENCE, 1998, 396 (1-3) :227-240

← 1 2 3 4 5 →