Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

被引：28

作者：

Czernohorsky, M. ^{[1
]}

Tetzlaff, D. ^{[1
]}

Bugiel, E. ^{[1
]}

Dargis, R. ^{[1
]}

Osten, H. J. ^{[1
]}

Gottlob, H. D. B. ^{[2
]}

Schmidt, M. ^{[2
]}

Lemme, M. C. ^{[2
]}

Kurz, H. ^{[2
]}

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[2] AMO GmbH, Adv Microelect Ctr Aachen, D-52074 Aachen, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 03期

关键词：

D O I：

10.1088/0268-1242/23/3/035010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.

引用

页数：4

共 10 条

[1]

ADACHI G, 2004, BINARY RARE EARTH OX

[2] Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001) [J].

Czernohorsky, M ;

Bugiel, E ;

Osten, HJ ;

Fissel, A ;

Kirfel, O .

APPLIED PHYSICS LETTERS, 2006, 88 (15)

[3] Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes [J].

Echtermeyer, T. ;

Gottlob, H. D. B. ;

Wahlbrink, T. ;

Mollenhauer, T. ;

Schmidt, M. ;

Efavi, J. K. ;

Lemme, M. C. ;

Kurz, H. .

SOLID-STATE ELECTRONICS, 2007, 51 (04) :617-621

[4] Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology [J].

Endres, Ralf ;

Stefanov, Yordan ;

Schwalke, Udo .

MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) :528-531

[5] 0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSINiSi metal electrodes [J].

Gottlob, H. D. B. ;

Echtermeyer, T. ;

Schmidt, M. ;

Mollenhauer, T. ;

Efavi, J. K. ;

Wahlbrink, T. ;

Lemme, M. C. ;

Czernohorsky, M. ;

Bugiel, E. ;

Fissel, A. ;

Osten, H. J. ;

Kurz, H. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :814-816

[6] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[7] Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application [J].

Laha, Apurba ;

Osten, H. J. ;

Fissel, A. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[8] Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon [J].

Lo Nigro, R ;

Raineri, V ;

Bongiorno, C ;

Toro, R ;

Malandrino, G ;

Fragalá, IL .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :129-131

[9] Integration of functional epitaxial oxides into silicon:: from high-k application to nanostructures [J].

Osten, H. J. ;

Czernohorsky, M. ;

Dargis, R. ;

Laha, A. ;

Kuehne, D. ;

Bugiel, E. ;

Fissel, A. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2222-2225

[10]

Osten HJ, 2007, TOP APPL PHYS, V106, P101

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