Analysis of background events in Silicon Drift Detectors

被引：11

作者：

Eggert, T

Goldstrass, P

Kemmer, J

Pahlke, A

机构：

[1] Ketek GmbH, D-81739 Munich, Germany

[2] MPI Halbleiterlab, D-81739 Munich, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 512卷 / 1-2期

关键词：

Silicon Drift Detector; peak-to-background ratio; partial events;

D O I：

10.1016/S0168-9002(03)01902-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Measurements of the energy resolution and the peak-to-background ratio of a Silicon Drift Detector at several positions and biasing voltages are performed. The origins of events with partial charge collection, which contribute to the background, are identified. A model describing the different mechanisms and the spatial distribution of partial events is developed. By optimizing the biasing voltages, an improvement of the peak-to-background ratio of up to 20% is obtained. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：257 / 264

页数：8

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