Interband impact ionization and nonlinear absorption of terahertz radiation in semiconductor heterostructures

被引：132
|
作者：
Cao, JC [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.91.237401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have theoretically investigated nonlinear free-carrier absorption of terahertz (THz) radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long-standing experimental result on the nonlinear absorption in the THz regime.
引用
收藏
页码：237401 / 237401
页数：4
相关论文
共 50 条
  • [31] Nonlinear Absorption of Terahertz Radiation by Free Charge Carriers in Polar Semiconductors
    V. L. Malevich
    Journal of Applied Spectroscopy, 2024, 91 : 17 - 20
  • [32] Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation
    Zhang, T. Y.
    Zhao, W.
    Liu, X. M.
    Zhang, C.
    APPLIED PHYSICS LETTERS, 2007, 91 (04)
  • [33] EFFECT OF INDIRECT INTERBAND TRANSITIONS ON TERAHERTZ CONDUCTIVITY IN "DECORATED" GRAPHENE BILAYER HETEROSTRUCTURES
    Ryzhii, V.
    Otsuji, T.
    Ryzhii, M.
    Mitin, V.
    Shur, M. S.
    LITHUANIAN JOURNAL OF PHYSICS, 2015, 55 (04): : 243 - 248
  • [34] Coherent Terahertz Control of Vertical Transport in Semiconductor Heterostructures
    Vanska, O.
    Tittonen, I.
    Koch, S. W.
    Kira, M.
    PHYSICAL REVIEW LETTERS, 2015, 114 (11)
  • [35] Ultrafast terahertz response of optically excited semiconductor heterostructures
    Golde, D.
    Kira, M.
    Koch, S. W.
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XIV, 2010, 7600
  • [36] Observation of crossover from intraband to interband nonlinear terahertz optics
    Chai, X.
    Ropagnol, X.
    Ovchinnikov, A.
    Chefonov, O.
    Ushakov, A.
    Garcia-Rosas, C. M.
    Isgandarov, E.
    Agranat, M.
    Ozaki, T.
    Savel'ev, A.
    OPTICS LETTERS, 2018, 43 (21) : 5463 - 5466
  • [37] Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation
    Olbrich, P.
    Zoth, C.
    Lutz, P.
    Drexler, C.
    Bel'kov, V. V.
    Terent'ev, Ya. V.
    Tarasenko, S. A.
    Semenov, A. N.
    Ivanov, S. V.
    Yakovlev, D. R.
    Wojtowicz, T.
    Wurstbauer, U.
    Schuh, D.
    Ganichev, S. D.
    PHYSICAL REVIEW B, 2012, 86 (08)
  • [38] Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures
    Otsuji, Taiichi
    Karasawa, Hiromi
    Watanabe, Takayuki
    Suemitsu, Tetsuya
    Suemitsu, Maki
    Sano, Eiichi
    Knap, Wojciech
    Ryzhii, Victor
    COMPTES RENDUS PHYSIQUE, 2010, 11 (7-8) : 421 - 432
  • [39] Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano-Heterostructures
    Otsuji, T.
    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
  • [40] Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness
    Hubmann, S.
    Budkin, G. V.
    Urban, M.
    Bel'kov, V. V.
    Dmitriev, A. P.
    Ziegler, J.
    Kozlov, D. A.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Kvon, Z. D.
    Weiss, D.
    Ganichev, S. D.
    JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2022, 43 (9-10) : 845 - 845
12345