Experimental evidence of the fast and slow charge trapping/detrapping processes in high-k dielectrics subjected to PBTI stress

被引：48

作者：

Heh, Dawei ^{[1
]}

Young, Chadwin D. ^{[1
]}

Bersuker, Gennadi ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 02期

关键词：

discharge; electron trapping; high-k; single pulse; transient charge;

D O I：

10.1109/LED.2007.914088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-pulse technique, with a wide range of pulse times, has been applied to study positive bias temperature instability in high-k nMOSFETs. It is shown that the charging phenomenon includes both fast and slow electron trapping processes with rather well-defined characteristic times, which differ by six orders of magnitude. On the other hand, the poststress charge relaxation cannot be described by a simple detrapping process, which makes identifying the dominant detrapping mechanism complicated.

引用

收藏

页码：180 / 182

页数：3

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