Effects of sputtering pressure on properties of copper oxide thin films prepared by rf magnetron sputtering

被引：8
作者：
Darma, T. H.
Ogwu, A. A. [1 ]
Placido, F.
机构：
[1] Univ W Scotland, Thin Film Ctr, Paisley PA1 2BE, Renfrew, Scotland
来源：
MATERIALS TECHNOLOGY | 2011年 / 26卷 / 01期
关键词：
Copper oxide; thin films; rf magnetron sputtering; sputtering pressure; CHEMICAL-VAPOR-DEPOSITION; CUPROUS-OXIDE; OPTICAL CHARACTERIZATION; STRUCTURAL-PROPERTIES; SOLAR-CELLS; CU2O; TEMPERATURE; SUPERCONDUCTORS; OXIDATION;
D O I：
10.1179/175355511X12941605982226
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper oxide thin films produced by rf magnetron sputtering on glass substrates have been characterised by XRD, SEM, AFM, spectrophotometer and four-point probe measurements. It is shown that process parameters can be varied to produce films of varying compositions, and optical and electrical properties. Depositions at 200 W power and an oxygen flowrate of 2 sccm in particular are found to favour the formation of single phase cuprous oxide. The optical and electrical properties of the films prepared under the stated conditions are of potential interest for application in semiconducting materials.
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页码：28 / 31
页数：4
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