A Highly Linear Dual-Gain CMOS Low-Noise Amplifier for X-Band

被引：10
作者：
Meghdadi, Masoud [1 ]
Piri, Milad [2 ]
Medi, Ali [2 ]
机构：
[1] Shahid Beheshti Univ, Dept Elect Engn, Tehran 1983969411, Iran
[2] Sharif Univ Technol, Dept Elect Engn, Tehran 1458889694, Iran
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2018年 / 65卷 / 11期
关键词：
1 dB-compression point; current steering; gain switching; inductive degeneration; input matching; linearity; and low-noise amplifiers; TRANSCEIVER; SYSTEMS; CHIP; LNA;
D O I：
10.1109/TCSII.2017.2778311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly linear X-band low-noise amplifier (LNA) is proposed and implemented in a standard 0.18-mu m CMOS technology. The LNA features both high- and low-gain operation modes. In its normal high-gain mode, the LNA shows a small-signal gain of 13.6 dB with an IIP3 of +9.5 dBm and a noise figure of 4.7 dB. The two-stage amplifier draws 90 mA from the 3.3-V power supply to achieve +14.8 dBm output P1dB (+2.2 dBm input P1dB). In the low-gain mode, the gain is reduced by about 10 dB to further enhance the linearity and to accommodate very large blockers. Accordingly, the input P1dB is enhanced to +13.7 dBm while the noise figure is increased by 8.1 dB. A technique is also introduced to maintain the input matching when the LNA is switched to operate in the low-gain mode.
引用
收藏
页码：1604 / 1608
页数：5
相关论文
共 16 条
[1]   X/Ku band CMOS LNA design techniques [J].
Afshar, Bagher ;
Niknejad, Ali M. .
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2006, :389-392
[2]  
[Anonymous], 2016, IEEE POWER ENERGY SO
[3]  
Chee YH, 2017, ISSCC DIG TECH PAP I, P292, DOI 10.1109/ISSCC.2017.7870376
[4]  
Chi PS, 2010, EUR MICROW INTEGRAT, P436
[5]   Power-Aware Multiband-Multistandard CMOS Receiver System-Level Budgeting [J].
El-Nozahi, Mohamed ;
Sanchez-Sinencio, Edgar ;
Entesari, Kamran .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2009, 56 (07) :570-574
[6]   A Fully Integrated 0.18-μm CMOS Transceiver Chip for X-Band Phased-Array Systems [J].
Gharibdoust, Kiarash ;
Mousavi, Naser ;
Kalantari, Milad ;
Moezzi, Mohsen ;
Medi, Ali .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (07) :2192-2202
[7]   A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS [J].
Hsieh, Yi-Keng ;
Kuo, Jing-Lin ;
Wang, Huei ;
Lu, Liang-Hung .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (11) :610-612
[8]  
Kalyoncu I, 2012, EUR MICROW INTEGRAT, P103
[9]  
Li Guiping, 2010, 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT 2010), P1001, DOI 10.1109/ICMMT.2010.5525118
[10]   A Fully Integrated X-Band Phased-Array Transceiver in 0.13-μm SiGe BiCMOS Technology [J].
Liu, Chao ;
Li, Qiang ;
Li, Yihu ;
Deng, Xiao-Dong ;
Li, Xiang ;
Liu, Haitao ;
Xiong, Yong-Zhong .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (02) :575-584
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