Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

被引：25

作者：

Ma, N. ^{[1
]}

Wang, X. Q. ^{[1
]}

Xu, F. J. ^{[1
]}

Tang, N. ^{[1
]}

Shen, B. ^{[1
]}

Ishitani, Y. ^{[2
]}

Yoshikawa, A. ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

基金：

中国国家自然科学基金;

关键词：

LAYERS;

D O I：

10.1063/1.3522892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at similar to 600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results and ensemble Monte Carlo simulation confirms the p-type bulk conduction under the surface electron accumulation layer. Furthermore, it is found that there is an exponential relationship between the hole concentration in the p-type bulk layer and the reciprocal kink temperature, which provides an effective way to evaluate the hole concentration in Mg-doped InN bulk layer through Hall-effect measurements. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522892]

引用

页数：3

共 20 条

[1] Buried p-type layers in mg-doped InN
Anderson, P. A.
Swartz, C. H.
Carder, D.
Reeves, R. J.
Durbin, S. M.
Chandril, S.
Myers, T. H.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (18)
[2] DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
BESIKCI, C
CHOI, YH
LABEYRIE, G
BIGAN, E
RAZEGHI, M
COHEN, JB
CARSELLO, J
DRAVID, VP
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) : 5820 - 5828
[3] Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior
Dmowski, L. H.
Baj, M.
Suski, T.
Przybytek, J.
Czernecki, R.
Wang, X.
Yoshikawa, A.
Lu, H.
Schaff, W. J.
Muto, D.
Nanishi, Y.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[4] Quasiparticle band structure based on a generalized Kohn-Sham scheme
Fuchs, F.
Furthmueller, J.
Bechstedt, F.
Shishkin, M.
Kresse, G.
[J]. PHYSICAL REVIEW B, 2007, 76 (11)
[5] Evidence for p-type doping of InN
Jones, RE
Yu, KM
Li, SX
Walukiewicz, W
Ager, JW
Haller, EE
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW LETTERS, 2006, 96 (12)
[6] HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE
LOU, LF
FRYE, WH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2253 - 2267
[7] Surface charge accumulation of InN films grown by molecular-beam epitaxy
Lu, H
Schaff, WJ
Eastman, LF
Stutz, CE
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (11) : 1736 - 1738
[8] The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis
O'Leary, Stephen K.
Foutz, Brian E.
Shur, Michael S.
Eastman, Lester F.
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (03) : 218 - 230
[9] Origin of the n-type conductivity of InN:: The role of positively charged dislocations
Piper, L. F. J.
Veal, T. D.
McConville, C. F.
Lu, Hai
Schaff, W. J.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (25)
[10] Low-field electron mobility in wurtzite InN
Polyakov, VM
Schwierz, F
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3

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