Growth and XRD analysis of the diluted magnetic semiconductor Zn1-xNixO

被引：7

作者：

Ali, K. S. Syed ^{[2
]}

Saravanan, R. ^{[1
]}

Acikgoz, M. ^{[3
]}

机构：

[1] Madura Coll, Dept Phys, Madurai 625011, Tamil Nadu, India

[2] Estill High Sch, Dept Sci, Estill, SC 29918 USA

[3] Bahcesehir Univ, Fac Arts & Sci, TR-34349 Besiktas, Turkey

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2011年 / 46卷 / 01期

关键词：

magnetic materials; sol-gel growth; X-ray diffraction; electronic structure; DMS; ELECTRON-DENSITY DISTRIBUTION; MAXIMUM-ENTROPY METHOD; FERROMAGNETISM; REFINEMENT; OXIDE; RT;

D O I：

10.1002/crat.201000387

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Diluted magnetic semiconductor compound Zn1-xNixO (x=0.01, 0.02, 0.03, 0.04 and 0.05) was prepared by sol-gel method and characterized using powder XRD for the distribution of electrons and bonding in the unit cell. The electronic structural studies of this material were carried out by maximum entropy method (MEM) for the quantitative and qualitative measurement on the inclusion and the effect induced on bonding by Ni doping. The spatial arrangement of charge and the bonding behavior of this material were analyzed from 3D, 2D and 1D density distributions. The evidence for the addition of Ni in the host lattice of Zn is realized. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：41 / 47

页数：7

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