Piezoelectric properties in two-dimensional materials: Simulations and experiments

被引:265
作者
Hinchet, Ronan [1 ]
Khan, Usman [1 ]
Falconi, Christian [2 ]
Kim, Sang-Woo [1 ,3 ]
机构
[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[3] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
关键词
TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTORS; DENSITY-FUNCTIONAL-THEORY; LIGHT-EMITTING-DIODES; ATOMIC-LAYER MOS2; ELASTIC PROPERTIES; ENERGY-CONVERSION; LITHIUM ADSORPTION; MONOLAYER MOS2; HIGH-MOBILITY;
D O I
10.1016/j.mattod.2018.01.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The piezoelectric effect, discovered in 1880 by Jacques and Pierre Curie, effectively allows to transduce signals from the mechanical domain to the electrical domain and vice versa. For this reason, piezoelectric devices are already ubiquitous, including, for instance, quartz oscillators, mechanical actuators with sub-atomic resolution and microbalances. However, the ability to synthesize two-dimensional (2D) materials may enable the fabrication of innovative devices with unprecedented performance. For instance, many materials which are not piezoelectric in their bulk form become piezoelectric when reduced to a single atomic layer; moreover, since all the atoms belong to the surface, piezoelectricity can be effectively engineered by proper surface modifications. As additional advantages, 2D materials are strong, flexible, easy to be co-integrated with conventional integrated circuits or micro-electromechanical systems and, in comparison with bulk or quasi-1D materials, easier to be simulated at the atomistic level. Here, we review the state of the art on 2D piezoelectricity, with reference to both computational predictions and experimental characterization. Because of their unique advantages, we believe 2D piezoelectric materials will substantially expand the applications of piezoelectricity.
引用
收藏
页码:611 / 630
页数:20
相关论文
共 236 条
[1]   Germanene: the germanium analogue of graphene [J].
Acun, A. ;
Zhang, L. ;
Bampoulis, P. ;
Farmanbar, M. ;
van Houselt, A. ;
Rudenko, A. N. ;
Lingenfelder, M. ;
Brocks, G. ;
Poelsema, B. ;
Katsnelson, M. I. ;
Zandvliet, H. J. W. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (44)
[2]   Giant Piezoelectric Size Effects in Zinc Oxide and Gallium Nitride Nanowires. A First Principles Investigation [J].
Agrawal, Ravi ;
Espinosa, Horacio D. .
NANO LETTERS, 2011, 11 (02) :786-790
[3]  
Ajayan Pulickel, 2016, Physics Today, V69, P38, DOI 10.1063/PT.3.3297
[4]   A review on mechanics and mechanical properties of 2D materials-Graphene and beyond [J].
Akinwande, Deji ;
Brennan, Christopher J. ;
Bunch, J. Scott ;
Egberts, Philip ;
Felts, Jonathan R. ;
Gao, Huajian ;
Huang, Rui ;
Kim, Joon-Seok ;
Li, Teng ;
Li, Yao ;
Liechti, Kenneth M. ;
Lu, Nanshu ;
Park, Harold S. ;
Reed, Evan J. ;
Wang, Peng ;
Yakobson, Boris I. ;
Zhang, Teng ;
Zhang, Yong-Wei ;
Zhou, Yao ;
Zhu, Yong .
EXTREME MECHANICS LETTERS, 2017, 13 :42-77
[5]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[6]   Honeycomb Carbon: A Review of Graphene [J].
Allen, Matthew J. ;
Tung, Vincent C. ;
Kaner, Richard B. .
CHEMICAL REVIEWS, 2010, 110 (01) :132-145
[7]   Hydrogen adsorption on graphite (0001) surface: A combined spectroscopy-density-functional-theory study [J].
Allouche, A ;
Ferro, Y ;
Angot, T ;
Thomas, C ;
Layet, J-M .
JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (12)
[8]   Piezoelectric properties of monolayer II-VI group oxides by first-principles calculations [J].
Alyoruk, M. Menderes .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (12) :2534-2539
[9]   Promising Piezoelectric Performance of Single Layer Transition-Metal Dichalcogenides and Dioxides [J].
Alyoruk, M. Menderes ;
Aierken, Yierpan ;
Cakir, Deniz ;
Peeters, Francois M. ;
Sevik, Cem .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (40) :23231-23237
[10]   Piezo-Semiconductive Quasi-1D Nanodevices with or without Anti-Symmetry [J].
Araneo, Rodolfo ;
Lovat, Giampiero ;
Burghignoli, Paolo ;
Falconi, Christian .
ADVANCED MATERIALS, 2012, 24 (34) :4719-4724