Large-Area Quantum-Dot Light Emitting Diode Arrays with ZnO Nanoparticles as Electron Transport/Injection Layer

被引：24

作者：

Qasim, Khan ^{[1
]}

Chen, Jing ^{[1
]}

Xu, Feng ^{[2
]}

Wu, Jun ^{[1
]}

Li, Zhi ^{[1
]}

Lei, Wei ^{[1
]}

Cui, Yiping ^{[1
]}

Xia, Jun ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China

[2] Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nanopico Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

SCIENCE OF ADVANCED MATERIALS | 2014年 / 6卷 / 12期

关键词：

Quantum Dots; QLEDs; ZnO Nanoparticles; Electron Transport Layer; LED; ELECTROLUMINESCENCE; NANOCRYSTALS; GREEN; BRIGHT; LEDS; RED;

D O I：

10.1166/sam.2014.2013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports the large area quantum dots light emitting diodes (QLEDs) that are composed of CdSe/ZnS core/shell quantum dots (QDs) as the light emitting layer (EML), ZnO nanoparticles (NPs) as the electron transport/injection layer (ETL) and organic polymers as the hole transport layer (HTL). By varying the thickness of ETL and EML, the performance of these QLEDs can be tailored/optimized accordingly, which is due to the different injection rate of the holes and electrons caused by the different thicknesses of ZnO and QDs layers. By adjusting the thicknesses of the constituent layers, large area QLED devices (10 cmx10 cm active area, 32x32 pixels) are uniformly developed with decreased leakage current, improved electroluminance efficiency (1 similar to 1.8 cd/A), low turn-on voltages (2 similar to 3.2 V) and saturated emission with the Commission Internationale de l'Enclairage (CIE) coordinates of (0.5134, 0.4868). This is attributed to the better electro-optical device design with well balanced carrier conduction, reduced quenching of QDs emission, and enhanced recombination.

引用

页码：2625 / 2631

页数：7

共 30 条

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