5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

被引:10
作者
Rahim, M. [1 ]
Khiar, A. [1 ]
Felder, F. [1 ]
Fill, M. [1 ]
Zogg, H. [1 ]
Sigrist, M. W. [2 ]
机构
[1] Swiss Fed Inst Technol, Thin Film Phys Grp, CH-8005 Zurich, Switzerland
[2] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2010年 / 100卷 / 02期
关键词
SEMICONDUCTOR-LASERS;
D O I
10.1007/s00340-010-4055-1
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 mu m wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-mu m thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1-y Eu (y) Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-mu m laser. Maximum output power for pulsed operation is currently up to > 1 W-p at -173A degrees C and > 10 mW at 10A degrees C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with < 1A degrees cone diameter), simple structure, and their easy tunability without mode-hopping. Wavelengths ranging from < 3 mu m up to > 15 mu m are accessible with Pb1-y X (y) Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.
引用
收藏
页码:261 / 264
页数:4
相关论文
共 10 条
[1]   Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].
Beck, M ;
Hofstetter, D ;
Aellen, T ;
Faist, J ;
Oesterle, U ;
Ilegems, M ;
Gini, E ;
Melchior, H .
SCIENCE, 2002, 295 (5553) :301-305
[2]   Lifetimes and Auger coefficients in type-II W interband cascade lasers [J].
Bewley, W. W. ;
Lindle, J. R. ;
Kim, C. S. ;
Kim, M. ;
Canedy, C. L. ;
Vurgaftman, I. ;
Meyer, J. R. .
APPLIED PHYSICS LETTERS, 2008, 93 (04)
[3]   High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].
Kuznetsov, M ;
Hakimi, F ;
Sprague, R ;
Mooradian, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) :1063-1065
[4]   Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength [J].
Rahim, M. ;
Arnold, M. ;
Felder, F. ;
Behfar, K. ;
Zogg, H. .
APPLIED PHYSICS LETTERS, 2007, 91 (15)
[5]   Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power [J].
Rahim, M. ;
Fill, M. ;
Felder, F. ;
Chappuis, D. ;
Corda, M. ;
Zogg, H. .
APPLIED PHYSICS LETTERS, 2009, 95 (24)
[6]   Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader [J].
Rahim, M. ;
Felder, E. ;
Fill, M. ;
Zogg, H. .
OPTICS LETTERS, 2008, 33 (24) :3010-3012
[7]   4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature [J].
Rahim, M. ;
Khiar, A. ;
Felder, F. ;
Fill, M. ;
Zogg, H. .
APPLIED PHYSICS LETTERS, 2009, 94 (20)
[8]   High-brightness long-wavelength semiconductor disk lasers [J].
Schulz, Nicola ;
Hopkins, John-Mark ;
Rattunde, Marcel ;
Burns, David ;
Wagner, Joachim .
LASER & PHOTONICS REVIEWS, 2008, 2 (03) :160-181
[9]   Vertical-external-cavity semiconductor lasers [J].
Tropper, AC ;
Foreman, HD ;
Garnache, A ;
Wilcox, KG ;
Hoogland, SH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (09) :R75-R85
[10]  
ZOGG H, 2009, P SPIE, V7193