Effect of SHI irradiation and high temperature annealing on the microstructure of SiC implanted with Ag

被引：9

作者：

Abdelbagi, H. A. A. ^{[1
,2
]}

Skuratov, V. A. ^{[3
,4
]}

Adeojo, S. A. ^{[1
,5
]}

Mohlala, T. M. ^{[1
]}

Hlatshwayo, T. T. ^{[1
]}

Malherbe, J. B. ^{[1
]}

机构：

[1] Univ Pretoria, Phys Dept, ZA-0002 Pretoria, South Africa

[2] Shendi Univ, Dept Phys, Shendi, Sudan

[3] Natl Res Nucl Univ MEPhI, Moscow, Russia

[4] Joint Inst Nucl Res, Dubna, Russia

[5] Obafemi Awolowo Univ, Ife, Nigeria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2022年 / 511卷

基金：

新加坡国家研究基金会;

关键词：

SHI; SiC; Microstructure; HEAVY-IONS IRRADIATION; RAMAN-SCATTERING; DEGREES-C; SILICON; SILVER; DIFFUSION; FUEL; MIGRATION; BEHAVIOR; DAMAGE;

D O I：

10.1016/j.nimb.2021.11.016

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Scanning electron microscopy (SEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS) were used to study the influence of swift heavy ion (SHI) irradiation and annealing on the microstructure of polycrystalline SiC implanted with silver (Ag). Polycrystalline SiC specimens were first implanted with 360 keV Ag + ions at room temperature (RT) to a fluence of 2 x 1016cmxfffd; 2. Thereafter, some of the implanted samples were irradiated with Xe ions of 167 MeV (SHI) at room temperature to a fluence of 3.4 x 1014 cmxfffd; 2 and 8.4 x 1014 cm-2. Both the as-implanted and implanted then irradiated samples were annealed in vacuum at temperatures ranging from 1100 to 1400 degrees C in steps of 100 degrees C for 5 h. Raman and SEM results showed that implantation of silver (Ag) resulted in complete amorphization of the near surface region of the SiC substrates. However, SHI irradiation of the as-implanted SiC resulted in partial recrystallization of the initially amorphized layer. The asimplanted samples exhibited more crystallinity after annealing at 1100 degrees C as compared to SHI irradiated samples annealed at same conditions. This poor recrystallization of the SHI irradiated SiC samples was due to the amount of impurities (i.e. concentration of Ag atoms) retained after annealing at 1100 degrees C. Raman and SEM results showed that annealing of the as-implanted samples at 1100 degrees C resulted in larger average crystal size compared to the SHI irradiated samples annealed in the same conditions. The intensity of the longitudinal optical (LO) phonon in Raman spectra increases with the increasing the average crystal sizes of SiC.

引用

页码：18 / 29

页数：12

共 46 条

[1] Effect of swift heavy ions irradiation in the migration of silver implanted into polycrystalline SiC [J].

Abdelbagi, H. A. A. ;

Skuratov, V. A. ;

Motloung, S. V. ;

Njoroge, E. G. ;

Mlambo, M. ;

Malherbe, J. B. ;

O'Connell, J. H. ;

Hlatshwayo, T. T. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 461 :201-209

[2] Effect of swift heavy ions irradiation on the migration behavior of strontium implanted into polycrystalline SiC [J].

Abdelbagi, H. A. A. ;

Skuratov, V. A. ;

Motloung, S. V. ;

Njoroge, E. G. ;

Mlambo, M. ;

Hlatshwayo, T. T. ;

Malherbe, J. B. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 451 :113-121

[3]

Abderrazak Houyem., 2011, Silicon Carbide: Synthesis and Properties, DOI DOI 10.5772/15736

[4] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[5] Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals [J].

Debelle, A. ;

Backman, M. ;

Thome, L. ;

Weber, W. J. ;

Toulemonde, M. ;

Mylonas, S. ;

Boulle, A. ;

Pakarinen, O. H. ;

Juslin, N. ;

Djurabekova, F. ;

Nordlund, K. ;

Garrido, F. ;

Chaussende, D. .

PHYSICAL REVIEW B, 2012, 86 (10)

[6] Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals [J].

Debelle, A. ;

Thome, L. ;

Dompoint, D. ;

Boulle, A. ;

Garrido, F. ;

Jagielski, J. ;

Chaussende, D. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (45)

[7]

Feng X., 2016, P 3 INT C MECH INF T

[8]

Ferreira T., 2011, The ImageJ user guide, V1, P44

[9] Influence of radiation damage on krypton diffusion in silicon carbide [J].

Friedland, E. ;

Hlatshwayo, T. T. ;

van der Berg, N. G. ;

Mabena, M. C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 354 :42-46

[10] Influence of radiation damage on xenon diffusion in silicon carbide [J].

Friedland, E. ;

Gaertner, K. ;

Hlatshwayo, T. T. ;

van der Berg, N. G. ;

Thabethe, T. T. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 332 :415-420

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