Effect of Ag doping on the performance of Cu2SnS3 thin-film solar cells

被引:25
作者
Zhao, Yun [1 ,2 ,3 ]
Chang, Le [1 ]
Dong, Xiao-Fei [1 ]
Zhang, Hui-Xia [1 ]
Li, Yan [1 ]
Chen, Jian-Biao [1 ]
机构
[1] Northwest Normal Univ, Coll Phys & Elect Engn, Key Lab Atom & Mol Phys & Funct Mat Gansu Prov, Lanzhou 730070, Peoples R China
[2] Chinese Acad Sci, Lanzhou Inst Chem Phys, Lanzhou 730000, Peoples R China
[3] Chinese Acad Sci, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China
关键词
Cu2SnS3; Ag; Doping; Thin-film solar cells; PRECURSOR SOLUTION; CU2ZNSNS4;
D O I
10.1016/j.solener.2020.03.006
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
For the promising next-generation thin-film solar cells, Cu2SnS3 (CTS) solar cells still suffer from low open circuit voltage (VOC) and so resulting an unsatisfactory power conversion efficiency. Herein, Ag was introduced in solution-processed CTS thin films via adding AgNO3 into precursor solution for photovoltaic devices. Compared with CTS, the VOC deficit for CuxAg(2-x)SnS(3) (CATS) based cells could be effectively reduced for about 10 mV, together with the increased short circuit current density (JSC) and fill factor (FF), a power conversion efficiency of 3.99% was achieved. Such improved performance of CATS cells could be attributed to the improved crystallization, reduced shunting channels and the decreased band-gap of CATS films.
引用
收藏
页码:190 / 194
页数:5
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