A study on the photoluminescence properties of porous 6H-Sic(p) and Sic film on p-Si substrate

P-type porous SiC layers were fabricated by anodization of a hot-pressed p-type 6H-SiC (30 k Omega cm) and a 1.6 mu m SiC film was deposited onto p-type Si(100) substrate by Pulsed Laser Deposition (PLD) in HF. In order to facilitate the electrochemical etching of the substrate, ethylene glycol electrolyte has been added to the solution and a thin metallic. lm of aluminium (Al) has been deposited onto a SiC prior to anodization. The structure and properties of the porous SiC layer formed by this method were investigated by Scanning Electron Microscopy (SEM) and Photoluminescence (PL). It shows that photoluminescence spectra exhibit two emission bands centered at 2.20 eV (blue band) and an extended broad band from 2.20 to 3.22 eV (green band) from porous 6H-SiC (PSC). On the contrary, porous thin 1.6 mu m SiC layer exhibits only a blue band centered at 2.95 eV. Finally, the results indicate clearly that porous SiC gives off green and blue light. Also, there is a shift to blue luminescence with the same order of magnitude when using a thin SiC layer deposited onto silicon (p-Si(100)).