Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

被引:8
作者
Henn-Lecordier, L [1 ]
Kidder, JN
Rubloff, GW
Gogol, CA
Wajid, A
机构
[1] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA
[3] Inficon, E Syracuse, NY 13057 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2001年 / 19卷 / 02期
关键词
D O I
10.1116/1.1340656
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An acoustic sensor, the Leybold Inficon Composer (TM), was implemented downstream to a production-scale tungsten chemical vapor deposition cluster tool for in situ process sensing. Process gases were sampled at the outlet of the reactor chamber and compressed with a turbomolecular pump and mechanical pump from the sub-Torr process pressure regime to above 50 Torr as required for gas sound velocity measurements in the acoustic cavity. The high molecular weight gas WF6 mixed with H-2 provides a substantial molecular weight contrast so that the acoustic sensing method appears especially sensitive to WF6 concentration. By monitoring the resonant frequency of exhaust process Eases, the depletion of WF6 resulting from the reduction by H-2 was readily observed in the 0.5 Torr process for wafer temperatures ranging from 300 to 350 degreesC. Despite WF6 depletion rates as low as 3%-5%, in situ wafer-state metrology was achieved with an error less than 6% over 17 processed wafers. This in situ metrology capability combined with accurate sensor response modeling suggests an effective approach for acoustic process sensing in order to achieve run-to-run process control of the deposited tungsten film thickness. (C) 2001 American Vancuum Society.
引用
收藏
页码:621 / 626
页数:6
相关论文
共 24 条
[1]   CORROSION OF REACTOR WALL SURFACES BY WF(6) [J].
BELL, DA ;
MCCONICA, CM ;
FALCONER, JL ;
LU, ZM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (10) :2884-2888
[2]   PROCESS-CONTROL IN THE SEMICONDUCTOR MANUFACTURING ENVIRONMENT USING A HIGH-PRESSURE QUADRUPOLE MASS-SPECTROMETER [J].
BUCKLEY, ME .
VACUUM, 1993, 44 (5-7) :665-668
[3]   VARIATIONS IN TRIMETHYLINDIUM PARTIAL-PRESSURE MEASURED BY AN ULTRASONIC CELL ON MOVPE REACTOR [J].
BUTLER, BR ;
STAGG, JP .
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :481-487
[4]  
Butler S.W., 1997, Future Fab International, V1, P315
[5]  
CHANG HY, IN PRESS J VAC SC B
[6]   IN-SITU MONITORING OF THE PRODUCTS FROM THE SIH4+WF6 TUNGSTEN CHEMICAL-VAPOR-DEPOSITION PROCESS BY MICROVOLUME MOSS SPECTROMETRY [J].
CHEEK, RW ;
KELBER, JA ;
FLEMING, JG ;
BLEWER, RS ;
LUJAN, RD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (12) :3588-3590
[7]  
DeSisto WJ, 1999, CHEM VAPOR DEPOS, V5, P233, DOI 10.1002/(SICI)1521-3862(199910)5:5<233::AID-CVDE233>3.0.CO
[8]  
2-9
[9]   Ultraviolet absorption sensors for precursor delivery rate control for metalorganic chemical vapor deposition of multiple component oxide thin films [J].
DeSisto, WJ ;
Rappoli, BJ .
JOURNAL OF CRYSTAL GROWTH, 1998, 191 (1-2) :290-293
[10]  
Gogol C, 1999, R&D MAG, V41, P29