CU2ZNSNSE4 THIN FILMS PRODUCED BY SELENIZATION OF CU-ZN-SN COMPOSITION PRECURSOR FILMS

被引:0
|
作者
Volobujeva, O. [1 ]
Mellikov, E. [1 ]
Bereznev, S. [1 ]
Raudoja, J. [1 ]
Oepik, A. [1 ]
Raadik, T. [1 ]
机构
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
关键词
SOLAR-CELLS; CU2ZNSNS4; FABRICATION;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The influence of different constituent metallic and binary selenides precursor layers on the formation of Cu2ZnSnSe4 films with controlled morphology and phase composition is studied. It is shown that the selenization of metallic stacked precursor layers at temperatures higher than 420 degrees C leads to high quality films, but the films are multi-phased and contain additionally to Cu2ZnSnSe4 a separate ZnSe phase. The results indicate that stacked binary films allow the selenization step to be replaced with thermal treatment in an inert atmosphere, however, the formed Cu2ZnSnSe4 films are in Se deficit. It is only the sequence of constituent layers ZnSe/SnSe/CuSe in the precursor that leads to satisfactory adhesion of the formed Cu2ZnSnSe4 film to the Mo substrate. It was found that the phase composition and morphology of Cu2ZnSnSe4 films after the selenization of ZnSe/SnSe/CuSe precursors are strongly influenced by the morphology of the CuSe constituent layer.
引用
收藏
页码:257 / 263
页数:7
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