C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

被引：33

作者：

Tataroglu, A. ^{[1
]}

Altindal, S. ^{[1
]}

Azizian-Kalandaragh, Y. ^{[2
,3
]}

机构：

[1] Gazi Univ, Fac Sci, Phys Dept, Ankara, Turkey

[2] Univ Mohaghegh Ardabili, Dept Phys, POB 179, Ardebil, Iran

[3] Sabalan Univ Adv Technol, Engn Sci Dept, Namin, Iran

来源：

PHYSICA B-CONDENSED MATTER | 2020年 / 582卷

关键词：

Indium oxide (In2O3); Polyvinylpyrrolidone (PVP); MPS structure; Capacitance; Conductance; Frequency dependence; INTERFACE-STATE DENSITY; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; CAPACITANCE-VOLTAGE; SERIES RESISTANCE; POLY(VINYL ALCOHOL); SURFACE-STATES; AL/P-SI; I-V; FREQUENCY;

D O I：

10.1016/j.physb.2020.411996

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, the indium oxide (In2O3)-polyvinylpyrrolidone(PVP) film on the n-Si substrate was coated by a spin coating method. Thus, the Au/(In2O3-PVP)/n-Si metal-polymer-semiconductor (MPS) structure was fabricated. The capacitance/conductance-voltage-frequency (C-V-f and G/omega-V-f) characteristics of the fabricated MPS structure have been analyzed in the frequency range of 10 kHz - 1 MHz. The series resistance (R-S) and interface state density (N-SS) value of the MPS structure were determined by using the conductance and Hill-Coleman method, respectively. In addition, other electronic parameters such as the diffusion potential, barrier height, depletion layer width, and surface potential were extracted from the C-2-V characteristics.

引用

页数：5

共 47 条

[1] Analysis of interface states in Au/ZnO/p-InP (MOS) structure [J].