Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

被引：18

作者：

Chang, P. C. ^{[1
]}

Su, Y. K. ^{[1
,3
,4
]}

Lee, K. J. ^{[2
]}

Yu, C. L. ^{[3
,4
]}

Chang, S. J. ^{[3
,4
]}

Liu, C. H. ^{[5
]}

机构：

[1] Kun Shan Univ, Dept Elect Engn, Yung Kang 710, Taiwan

[2] I SHOU Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[5] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 737, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 504卷

关键词：

Ir/Pt; Schottky barrier; GaN; Photodetector;

D O I：

10.1016/j.jallcom.2010.02.194

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O-2 at 600 degrees C were fabricated successfully. With -5V applied bias, the reverse leakage current of the annealed PD was 3.65 x 10(-12) A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrOx phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19A/W and 1.05 x 10(3) after annealing with -6V applied bias. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S429 / S431

页数：3

共 15 条

[11] On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure [J].

Liu, Yi-Jung ;

Yen, Chih-Hung ;

Chen, Li-Yang ;

Tsai, Tsung-Han ;

Tsai, Tsung-Yuan ;

Liu, Wen-Chau .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) :1149-1151

[12] Anisotropic optical gain in m-plane InxGa1-xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates [J].

Onuma, T. ;

Okamoto, K. ;

Ohta, H. ;

Chichibu, S. F. .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[13] Optimization of InGaN-GaN MQW Photodetector Structures for High-Responsivity Performance [J].

Pereiro, Juan ;

Rivera, Carlos ;

Navarro, Alvaro ;

Munoz, Elias ;

Czernecki, Robert ;

Grzanka, Szymon ;

Leszczynski, Mike .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (5-6) :617-622

[14] An investigation of phase separation in the Ir-Pt binary system [J].

Yamabe-Mitarai, Yoko ;

Aoyagi, Takeshi ;

Abe, Taichi .

JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 484 (1-2) :327-334

[15] InGaN-GaN MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers [J].

Yu, C. L. ;

Chuang, R. W. ;

Chang, S. J. ;

Chang, P. C. ;

Lee, K. H. ;

Lin, J. C. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) :846-848

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