Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

被引：18

作者：

Chang, P. C. ^{[1
]}

Su, Y. K. ^{[1
,3
,4
]}

Lee, K. J. ^{[2
]}

Yu, C. L. ^{[3
,4
]}

Chang, S. J. ^{[3
,4
]}

Liu, C. H. ^{[5
]}

机构：

[1] Kun Shan Univ, Dept Elect Engn, Yung Kang 710, Taiwan

[2] I SHOU Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[5] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 737, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 504卷

关键词：

Ir/Pt; Schottky barrier; GaN; Photodetector;

D O I：

10.1016/j.jallcom.2010.02.194

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O-2 at 600 degrees C were fabricated successfully. With -5V applied bias, the reverse leakage current of the annealed PD was 3.65 x 10(-12) A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrOx phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19A/W and 1.05 x 10(3) after annealing with -6V applied bias. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S429 / S431

页数：3

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