Dislocation strain as the mechanism of phonon scattering at grain boundaries

被引:127
作者
Kim, Hyun-Sik [1 ,2 ,3 ]
Kang, Stephen D. [1 ,2 ]
Tang, Yinglu [1 ,2 ,4 ]
Hanus, Riley [1 ]
Snyder, G. Jeffrey [1 ,2 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA
[3] Samsung Elect, Samsung Adv Inst Technol, Mat Res Ctr, Suwon 443803, South Korea
[4] Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
关键词
LATTICE THERMAL-CONDUCTIVITY; GE-SI ALLOYS; THERMOELECTRIC-MATERIALS; LOW TEMPERATURES; CRYSTAL; METALS; ARRAYS; FILMS; HEAT;
D O I
10.1039/c5mh00299k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.
引用
收藏
页码:234 / 240
页数:7
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