Arsenic incorporation in MBE-grown HgCdTe studied with the use of ion milling

被引：6

作者：

Izhnin, I. I. ^{[1
]}

Dvoretsky, S. A. ^{[2
]}

Mynbaev, K. D. ^{[3
]}

Mikhailov, N. N. ^{[2
]}

Sidorov, Yu. G. ^{[2
]}

Varavin, V. S. ^{[2
]}

Jakiela, R. ^{[4
]}

Pociask, M. ^{[5
]}

Savitsky, G. ^{[6
]}

机构：

[1] R&D Inst Mat SRC Carat, Stryjska 202, UA-79031 Lvov, Ukraine

[2] RAS Ac, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[3] RAS, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Inst Phys PAS, PL-02668 Warsaw, Poland

[5] Rzeszow Univ, Inst Phys, PL-35310 Rzeszow, Poland

[6] Pidstrygach Inst Appl Problems Mech & Math NASU, UA-79060 Lvov, Ukraine

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6 | 2010年 / 7卷 / 06期

关键词：

HgCdTe; MBE; ion milling; defects; doping; electrical properties; MOLECULAR-BEAM EPITAXY;

D O I：

10.1002/pssc.200983179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion milling was employed for the study of arsenic incorporation in molecular beam epitaxy-grown Hg0.8Cd0.2Te films doped in situ. The behaviour of specific defects, which formed after injection of mercury interstitials provided by the milling, allowed for estimating density of electrically active arsenic atoms. It is confirmed that the most efficient incorporation of As occurs when arsenic flux cracking is used, at the cracking zone temperature T-cr > 700 degrees C. Growth with doping without cracking was found to be accompanied by formation of Te-related defects, which ion milling activated electrically. Films doped from the cracker cell with T-cr > 700 degrees C appear to be almost free of these defects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1618 / 1620

页数：3

共 8 条

[1] Doping of molecular beam epitaxy HgCdTe using an arsenic cracker source (As2)
Almeida, LA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (07) : 660 - 663
[2] Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe
Edwall, D
Piquette, E
Ellsworth, J
Arias, J
Swartz, CH
Bai, L
Tompkins, RP
Giles, NC
Myers, TH
Berding, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (06) : 752 - 756
[3] Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy
Pociask, M.
Izhnin, I. I.
Dvoretsky, S. A.
Mikhailov, N. N.
Sidorov, Yu G.
Varavin, V. S.
Mynbaev, K. D.
Sheregii, E.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (09)
[4] Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling
Pociask, M.
Izhnin, I. I.
Izhnin, A. I.
Dvoretsky, S. A.
Mikhailov, N. N.
Sidorov, Yu G.
Varavin, V. S.
Mynbaev, K. D.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (02)
[5] Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy
Sidorov, G. Yu.
Mikhailov, N. N.
Varavin, V. S.
Ikusov, D. G.
Sidorov, Yu. G.
Dvoretskii, S. A.
[J]. SEMICONDUCTORS, 2008, 42 (06) : 651 - 654
[6] Incorporation and activation of arsenic in MBE-grown HgCdTe
Tsen, G. K. O.
Sewell, R. H.
Atanacio, A. J.
Prince, K. E.
Musca, C. A.
Dell, J. M.
Faraone, L.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)
[7] Varavin VS, 2003, OPTO-ELECTRON REV, V11, P99
[8] Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra
Yue, Fangyu
Wu, Jun
Chu, Junhao
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (13)

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