Enhanced Performance and Thermal Stability of a-Si:H TFTs

被引：0

作者：

Indluru, A. ^{[1
]}

Alford, T. L.

机构：

[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 12期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; INSTABILITY MECHANISMS;

D O I：

10.1149/1.3501989

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si: H channel and/or the a-Si: H/insulator interface. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3501989] All rights reserved.

引用

页码：H467 / H470

页数：4

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