Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

被引：39
作者：
Kim, H. S. [1 ]
Plis, E. [1 ]
Gautam, N. [1 ]
Myers, S. [1 ]
Sharma, Y. [1 ]
Dawson, L. R. [1 ]
Krishna, S. [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期
关键词：
WAVE-GUIDE; PHOTODIODES;
D O I：
10.1063/1.3499290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on SU-8 passivation for reducing surface leakage current in type-II InAs/GaSb strained layer superlattice detectors (lambda(100% cut-off) similar to 12 mu m). The electrical behavior of SU-8 passivated and unpassivated devices was compared for devices with variable mesa sizes. Dark current was reduced by more than one order of magnitude for the small area (50 mu m x 50 mu m) passivated diode at 77 K. The surface resistivity, the responsivity and specific detectivity were measured for SU-8 passivated devices and are equal to 204 Omega cm, 0.58 A/W and 3.49 x 10(9) Jones, respectively (77 K). (C) 2010 American Institute of Physics. [doi:10.1063/1.3499290]
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页数：3
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