Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

被引：51

作者：

Pan, M ^{[1
]}

Steckl, AJ ^{[1
]}

机构：

[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1590738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on GaN/Al2O3 substrates. Trimethylgallium (TMGa), ammonia (NH3), and europium 2,2,4,4-tetramethyl-3,5-heptanedionate were used as sources for Ga, N, and Eu dopant, respectively. The influence of the V/III ratio during growth on the photoluminescence (PL) intensity has been studied using a fixed TMGa flow rate of 92 mumol/min and varying the NH3 flow rate. The film growth rate (similar to2 mum/h) is nearly constant with V/III ratio over the range from similar to30 to similar to1000. The Eu incorporation in GaN films was found to decrease with increasing V/III ratio. The Eu PL intensity (normalized to the Eu concentration! exhibited a maximum at a V/III ratio of similar to100. (C) 2003 American Institute of Physics.

引用

页码：9 / 11

页数：3

共 17 条

[1] MBE growth of Eu- or Tb-doped GaN and its optical properties [J].

Bang, H ;

Morishima, S ;

Li, ZQ ;

Akimoto, K ;

Nomura, M ;

Yagi, E .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :1027-1031

[2] Local structure and bonding of Er in GaN: A contrast with Er in Si [J].

Citrin, PH ;

Northrup, PA ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2865-2867

[3] Erbium doped GaAs by MOCVD [J].

Greenwald, AC ;

Linden, KJ ;

Rees, WS ;

Just, O ;

Haegel, NM ;

Donder, S .

RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 :63-68

[4]

Hara K, 1999, PHYS STATUS SOLIDI B, V216, P625, DOI 10.1002/(SICI)1521-3951(199911)216:1<625::AID-PSSB625>3.0.CO

[5]

2-K

[6] Red light emission by photoluminescence and electroluminescence from Eu-doped GaN [J].

Heikenfeld, J ;

Garter, M ;

Lee, DS ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1999, 75 (09) :1189-1191

[7] Ga flux dependence of Er-doped GaN luminescent thin films [J].

Lee, DS ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2002, 80 (05) :728-730

[8] RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates [J].

Lorenz, K ;

Vianden, R ;

Birkhahn, R ;

Steckl, AJ ;

da Silva, MF ;

Soares, JC ;

Alves, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :946-951

[9] Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium [J].

Lozykowski, HJ ;

Jadwisienczak, WM ;

Han, J ;

Brown, IG .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :767-769

[10] Photoluminescence and lattice location of Eu and Pr implanted GaN samples [J].

Monteiro, T ;

Boemare, C ;

Soares, MJ ;

Ferreira, RAS ;

Carlos, LD ;

Lorenz, K ;

Vianden, R ;

Alves, E .

PHYSICA B-CONDENSED MATTER, 2001, 308 :22-25

← 1 2 →