Nanoscale silicon-on-insulator deformation induced by stressed liner structures

被引：16

作者：

Murray, Conal E. ^{[1
]}

Ying, A. ^{[2
]}

Polvino, S. M. ^{[2
]}

Noyan, I. C. ^{[2
]}

Holt, M. ^{[3
]}

Maser, J. ^{[4
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Columbia Univ, Dept Appl Phys & Math, New York, NY 10027 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Argonne Natl Lab, Ctr Nanoscale Mat, Adv Photon Source, Argonne, IL 60439 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 08期

关键词：

MECHANICAL-STRESS; DIFFRACTION;

D O I：

10.1063/1.3579421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rotation and strain fields were mapped across silicon-on-insulator (SOI) regions induced by overlying stressed Si(3)N(4) features using x-ray nanobeam diffraction. The distribution in SOI tilt exhibited an antisymmetric distribution with a maximum magnitude of 7.9 milliradians, representing one of the first direct measurements of the lattice tilt conducted in situ within buried layers using a spot size of less than 100 nm. The measured rotation distribution corresponds to simulated values generated by boundary element method modeling, indicating that the strain transfer into the underlying SOI primarily induces elastic deformation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579421]

引用

页数：4

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