A deep level induced by gamma irradiation in Hg1-xCdxTe

被引：14

作者：

Hu, XW ^{[1
]}

Fang, JX

Wang, Q

Zhao, J

Lu, HQ

Gong, HM

Zhang, SK

Lu, F

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.121790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Admittance spectroscopy and deep-level transient spectroscopy measurements have been performed on n(+)-on-p Hg1-xCdxTe (x = 0.595) planar photodiodes grown by improved zone melt method. After 1.0 Mrads gamma irradiation, a new trap center is observed at 0.19 eV above the valence band, while the well-known 0.15 eV trap level disappears. The trap densities for these two levels are almost the same. We attribute this phenomenon to the gamma irradiation, which produces a compound defect correlated with Hg vacancy. (C) 1998 American Institute of Physics.

引用

页码：91 / 92

页数：2

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