The simulation of the low dose-rate radiation effect in bipolar devices

被引：0

作者：

Pershenkov, VS ^{[1
]}

Cherepko, SV ^{[1
]}

Belyakov, VV ^{[1
]}

Abramov, VV ^{[1
]}

Rusanovsky, VI ^{[1
]}

Sogoyan, AV ^{[1
]}

Rogov, VI ^{[1
]}

Ulimov, VN ^{[1
]}

Emelianov, VV ^{[1
]}

Nasibullin, VS ^{[1
]}

机构：

[1] Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1998年

关键词：

D O I：

10.1109/RADECS.1997.698846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental techniques for bipolar low dose-rate effect investigation and simulation are presented. The techniques utilize the bulk and peripheral recombination current separation and infrared illumination during high dose-rate laboratory test.

引用

页码：66 / 68

页数：3