Defect photoluminescence and structure properties of undoping (InxGa1-x)2O3 films and their dependence on sputtering pressure

被引：10
|
作者：
Lu, Hongliang [1 ]
Jiao, Shujie [1 ]
Nie, Yiyin [1 ]
Liu, Shuo [1 ]
Gao, Shiyong [1 ]
Wang, Dongbo [1 ]
Wang, Jinzhong [1 ]
Li, Lin [2 ]
Wang, Xianghu [3 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Harbin Normal Univ, Sch Phys & Elect Engn, Minist Educ, Key Lab Photon & Elect Bandgap Mat, Harbin 150025, Peoples R China
[3] Shanghai Dianji Univ, Coll Mat, Shanghai 201306, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 823卷
基金：
中国国家自然科学基金;
关键词：
InxGa1-x)(2)O-3 thin films; Sputtering pressure; Radio frequency magnetron sputtering; Green luminescence; Gallium vacancies; THIN-FILMS; OPTICAL-PROPERTIES; LUMINESCENCE; TEMPERATURE;
D O I：
10.1016/j.jallcom.2020.153903
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The (InxGa1-x)(2)O-3 thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (InxGa1-x)(2)O-3 thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (InxGa1-x)(2)O-3 thin films were estimated to be 6% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (InxGa1-x)(2)O-3 thin films was investigated. The role of V-Ga defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (InxGa1-x)(2)O-3 thin film was also proposed with intrinsic defect levels. (C) 2020 Elsevier B.V. All rights reserved.
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页数：7
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