共 28 条
Tunable photovoltaic effects induced by different cooling oxygen pressure in Bi0.9La0.1FeO3 thin films
被引:42
作者:

Gao, R. L.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Yang, H. W.
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h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Fu, C. L.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Cai, W.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Chen, G.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Deng, X. L.
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Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Sun, J. R.
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机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Zhao, Y. G.
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h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

Shen, B. G.
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h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
机构:
[1] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Photovoltaic effects;
Bi0.9La0.1FeO3 thin films;
Oxygen vacancies;
Schottky barrier;
Polarization;
FERROELECTRIC BIFEO3;
BULK;
D O I:
10.1016/j.jallcom.2014.10.180
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The photovoltaic effects in Bi0.9La0.1FeO3 thin films are found to be strongly dependent on the oxygen concentration which can be manipulated by cooling oxygen pressure. Switchable photovoltaic effects can be observed without any electric field applied in low oxygen pressure cooled samples, however, it is hard to detect with high oxygen pressure cooled samples, until the occurrence of polarization flipping by applied electric field. This switchable photovoltaic effects can be explained well by the variation of the Schottky barrier at the metal-Bi0.9La0.1FeO3 interface resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photo-current induced by the electro migration of oxygen vacancies is variable due to the diffusion of defects such as oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides new ideas for tuning the photovoltaic effect in ferroelectric materials. (C) 2014 Elsevier B.V. All rights reserved.
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页码:1 / 8
页数:8
相关论文
共 28 条
[1]
Photoconductivity in BiFeO3 thin films
[J].
Basu, S. R.
;
Martin, L. W.
;
Chu, Y. H.
;
Gajek, M.
;
Ramesh, R.
;
Rai, R. C.
;
Xu, X.
;
Musfeldt, J. L.
.
APPLIED PHYSICS LETTERS,
2008, 92 (09)

Basu, S. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Martin, L. W.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Chu, Y. H.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Gajek, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Ramesh, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Rai, R. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Xu, X.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Musfeldt, J. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2]
Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors
[J].
Chen, Bin
;
Zuo, Zhenghu
;
Liu, Yiwei
;
Zhan, Qing-Feng
;
Xie, Yali
;
Yang, Huali
;
Dai, Guohong
;
Li, Zhixiang
;
Xu, Gaojie
;
Li, Run-Wei
.
APPLIED PHYSICS LETTERS,
2012, 100 (17)

Chen, Bin
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Zuo, Zhenghu
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Liu, Yiwei
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Zhan, Qing-Feng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Xie, Yali
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Yang, Huali
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Dai, Guohong
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Li, Zhixiang
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Xu, Gaojie
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China

Li, Run-Wei
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[3]
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
[J].
Choi, T.
;
Lee, S.
;
Choi, Y. J.
;
Kiryukhin, V.
;
Cheong, S. -W.
.
SCIENCE,
2009, 324 (5923)
:63-66

Choi, T.
论文数: 0 引用数: 0
h-index: 0
机构: Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

Lee, S.
论文数: 0 引用数: 0
h-index: 0
机构: Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

Choi, Y. J.
论文数: 0 引用数: 0
h-index: 0
机构: Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

Kiryukhin, V.
论文数: 0 引用数: 0
h-index: 0
机构: Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA

Cheong, S. -W.
论文数: 0 引用数: 0
h-index: 0
机构:
Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
[4]
Band gap and Schottky barrier heights of multiferroic BiFeO3
[J].
Clark, S. J.
;
Robertson, J.
.
APPLIED PHYSICS LETTERS,
2007, 90 (13)

Clark, S. J.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Durham, Dept Phys, Durham DH1 3LE, England

论文数: 引用数:
h-index:
机构:
[5]
Multiferroic and magnetoelectric materials
[J].
Eerenstein, W.
;
Mathur, N. D.
;
Scott, J. F.
.
NATURE,
2006, 442 (7104)
:759-765

Eerenstein, W.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

Mathur, N. D.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

Scott, J. F.
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
[6]
The effect of polarization fatigue process and light illumination on the transport behavior of Bi0.9La0.1FeO3 sandwiched capacitor
[J].
Gao, R. L.
;
Chen, Y. S.
;
Sun, J. R.
;
Zhao, Y. G.
;
Li, J. B.
;
Shen, B. G.
.
JOURNAL OF APPLIED PHYSICS,
2013, 113 (18)

Gao, R. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Chen, Y. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Sun, J. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Zhao, Y. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Li, J. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Shen, B. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[7]
Complex transport behavior accompanying domain switching in La0.1Bi0.9FeO3 sandwiched capacitors
[J].
Gao, R. L.
;
Chen, Y. S.
;
Sun, J. R.
;
Zhao, Y. G.
;
Li, J. B.
;
Shen, B. G.
.
APPLIED PHYSICS LETTERS,
2012, 101 (15)

Gao, R. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Chen, Y. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Sun, J. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Zhao, Y. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Li, J. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

Shen, B. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[8]
Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films
[J].
Ji, Wei
;
Yao, Kui
;
Liang, Yung C.
.
ADVANCED MATERIALS,
2010, 22 (15)
:1763-+

Ji, Wei
论文数: 0 引用数: 0
h-index: 0
机构:
ASTAR, IMRE, Singapore 117602, Singapore
Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore ASTAR, IMRE, Singapore 117602, Singapore

Yao, Kui
论文数: 0 引用数: 0
h-index: 0
机构:
ASTAR, IMRE, Singapore 117602, Singapore ASTAR, IMRE, Singapore 117602, Singapore

Liang, Yung C.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore ASTAR, IMRE, Singapore 117602, Singapore
[9]
A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
[J].
Jiang, An Quan
;
Wang, Can
;
Jin, Kui Juan
;
Liu, Xiao Bing
;
Scott, James F.
;
Hwang, Cheol Seong
;
Tang, Ting Ao
;
Bin Lu, Hui
;
Yang, Guo Zhen
.
ADVANCED MATERIALS,
2011, 23 (10)
:1277-+

Jiang, An Quan
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Wang, Can
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Jin, Kui Juan
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Liu, Xiao Bing
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Scott, James F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Hwang, Cheol Seong
论文数: 0 引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Tang, Ting Ao
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Bin Lu, Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

Yang, Guo Zhen
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[10]
ATOMIC STRUCTURE OF BIFEO3
[J].
MICHEL, C
;
MOREAU, JM
;
ACHENBAC.GD
;
GERSON, R
;
JAMES, WJ
.
SOLID STATE COMMUNICATIONS,
1969, 7 (09)
:701-&

MICHEL, C
论文数: 0 引用数: 0
h-index: 0
机构: Departments of Physics and Chemistry, Graduate Center for Materials Research University of Missouri-Rolla, Rolla, MO

MOREAU, JM
论文数: 0 引用数: 0
h-index: 0
机构: Departments of Physics and Chemistry, Graduate Center for Materials Research University of Missouri-Rolla, Rolla, MO

ACHENBAC.GD
论文数: 0 引用数: 0
h-index: 0
机构: Departments of Physics and Chemistry, Graduate Center for Materials Research University of Missouri-Rolla, Rolla, MO

GERSON, R
论文数: 0 引用数: 0
h-index: 0
机构: Departments of Physics and Chemistry, Graduate Center for Materials Research University of Missouri-Rolla, Rolla, MO

JAMES, WJ
论文数: 0 引用数: 0
h-index: 0
机构: Departments of Physics and Chemistry, Graduate Center for Materials Research University of Missouri-Rolla, Rolla, MO