Thermoelectric Properties of Bi2Te3-In2Se3 Composite Thin Films Prepared by Co-Sputtering

被引：5

作者：

Kim, Kwang-Chon ^{[3
,4
]}

Choi, Won Chel ^{[4
]}

Kim, Hyun Jae ^{[3
]}

Lyeo, Ho-Ki ^{[2
]}

Kim, Jin-Sang ^{[4
]}

Park, Chan ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Korea Res Inst Stand & Sci, Nanoscale Energy Transport & Convers Lab, Taejon 305340, South Korea

[3] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[4] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 04期

关键词：

Thermoelectric; Bi2Te3; In2Se3; Nanodots; Phase Separation; PERFORMANCE; ALLOYS; MERIT;

D O I：

10.1166/jnn.2012.5584

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bi2Te3-In2Se3 films were prepared by co-sputtering followed by annealing, and their structural and thermoelectric properties were investigated. The immiscible nature of the two alloys results in precipitation of the second phase, thus leading to structures with self-assembled dots that are a few nanometers in scale. HAADF-STEM and HRTEM were used to confirm that In2Se3 nanodots that were a few nanometers in size did indeed form in the Bi2Te3 thin film. It was found that the incorporation of these nanodots can reduce the thermal conductivity of the thin film.

引用

页码：3633 / 3636

页数：4

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