Optical investigation of submonolayer phase transitions of Cs on GaAs(001)

被引:0
作者
Paget, D [1 ]
机构
[1] Ecole Polytech, Phys Mat Condensee Lab, F-91128 Palaiseau, France
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 170卷 / 02期
关键词
D O I
10.1002/(SICI)1521-396X(199812)170:2<391::AID-PSSA391>3.0.CO;2-N
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical surface sensitive techniques can probe phase transitions of cesium overlayers on GaAs(001) of less than one monolayer thickness. For cesium deposition at near liquid nitrogen temperature, surface diffusion of cesium is prohibited and there form disordered two-dimensional clusters. We consider two types of transitions: (i) Annealing to room temperature enables surface diffusion and induces an ordering of the overlayer. This transition is revealed from the Reflectance Anisotropy (RA) spectrum since, for the gallium-rich surface, the optical anisotropy is due to localized states, sensitive to the local potential created by the cesium overlayer. (ii) The formation of metallic clusters is revealed by photoreflectance spectroscopy. It is also found that this metallic phase is metastable and is destroyed by annealing to room temperature.
引用
收藏
页码:391 / 399
页数:9
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