A distributed trans-impedance amplifier using InGaP/InGaAs enhancement-mode PHEMT technology

被引：0
|
作者：
Wu, Chia-Song [1 ]
Liu, Hsing-Chung [1 ]
Chiu, Hsien-Chin [2 ]
Lee, Wei-Hsien [2 ]
机构：
[1] Vanung Univ, Dept Elect Engn, Chungli, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Linkou, Taiwan
来源：
MICROWAVE JOURNAL | 2008年 / 51卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broadband trans-impedance amplifier using a 0.5 mu m InGaP/InGaAs E-mode PHEMT process is reported for optical electronic communication applications. The distributed amplifier was achieved with a trans-impedance gain, of 50 dB-Omega and a bandwidth of 15.2 GHz in the 2.2 to 17.4 GHz. range. It also attained a noise figure range from 3.34 to 5.03 dB in the bandwidth of I to 10 GHZ. The trans-impedance amplifier utilizes the distributed technique with gain cells to enhance the gain and bandwidth performances. This trans-impedance amplifier technique provides an ultra-broad bandwidth for optoelectronic transmission communication applications.
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页码：140 / +
页数：4
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