A Low Voltage Capacitor Based Current Controlled Sense Amplifier for Input Offset Compensation

被引:0
作者
Vani, Y. Sudha [1 ]
Rani, N. Usha [1 ]
Vaddi, Ramesh [2 ]
机构
[1] VFSTR Univ, Dept Elect & Commun Engn, Guntur, Andhra Pradesh, India
[2] DSPM Int Inst Informat Technol, Nano Scale Integrated Circuits & Syst Self Powere, Chhattisgarh 492002, Madhya Pradesh, India
来源
PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017) | 2017年
关键词
Low Voltage; Sense Amplifier; SRAM; Offset compensation; SRAM;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
With CMOS technology scaling, there is a significant increase in transistor threshold voltage mismatch and variations, which result in offset voltage in SRAM designs. A large offset voltage will enlarge SRAM bitline swing and negatively affect dynamic power consumption during a read operation, sensing decision correct rate and operation speed. This paper presents a low voltage capacitor based current controlled sense amplifier design for input offset compensation. The simulation results carried out in 90nm CMOS technology prove that the proposed offset compensation scheme can reduce the standard deviation of offset voltage by 4x compared to the conventional sense amplifier design with about 0.4%, 2.9% overheads in area and power respectively at 0.5V.
引用
收藏
页码:23 / 24
页数:2
相关论文
共 8 条
[1]  
Giridhar B, 2014, ISSCC DIG TECH PAP I, V57, P242, DOI 10.1109/ISSCC.2014.6757418
[2]   A Low-Voltage SRAM Sense Amplifier With Offset Cancelling Using Digitized Multiple Body Biasing [J].
Liu, Bingyan ;
Cai, Jiangzheng ;
Yuan, Jia ;
Hei, Yong .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2017, 64 (04) :442-446
[3]   An Energy-Efficient Offset-Cancelling Sense Amplifier [J].
Shah, Jaspal Singh ;
Nairn, David ;
Sachdev, Manoj .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2013, 60 (08) :477-481
[4]   A 28 nm 2 Mbit 6 T SRAM With Highly Configurable Low-Voltage Write-Ability Assist Implementation and Capacitor-Based Sense-Amplifier Input Offset Compensation [J].
Sinangil, Mahmut E. ;
Poulton, John W. ;
Fojtik, Matthew R. ;
Greer, Thomas H., III ;
Tell, Stephen G. ;
Gotterba, Andreas J. ;
Wang, Jesse ;
Golbus, Jason ;
Zimmer, Brian ;
Dally, William J. ;
Gray, C. Thomas .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (02) :557-567
[5]   A 128 Kbit SRAM With an Embedded Energy Monitoring Circuit and Sense-Amplifier Offset Compensation Using Body Biasing [J].
Sinangil, Yildiz ;
Chandrakasan, Anantha P. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (11) :2730-2739
[6]   An offset compensation technique for latch type sense amplifiers in high-speed low-power SRAMs [J].
Singh, R ;
Bhat, N .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2004, 12 (06) :652-657
[7]   A 256 kb 65 nm 8T subthreshold SRAM employing sense-amplifier redundancy [J].
Verma, Naveen ;
Chandrakasan, Anantha P. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (01) :141-149
[8]   Yield and speed optimization of a latch-type voltage sense amplifier [J].
Wicht, B ;
Nirschl, T ;
Schmitt-Landsiedel, D .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (07) :1148-1158