In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

被引：62
作者：
Okino, H
Matsuda, I
Hobara, R
Hosomura, Y
Hasegawa, S
Bennett, PA
机构：
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 23期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.1948519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5 mu m long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 10(7) Omega. The resistivity of the NWs was 30 mu Omega cm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air. (c) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 25 条
[1]  
AONO M, UNPUB
[2]   Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].
Collins, PC ;
Arnold, MS ;
Avouris, P .
SCIENCE, 2001, 292 (5517) :706-709
[3]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[4]   Electrical conduction through surface superstructures measured by microscopic four-point probes [J].
Hasegawa, S ;
Shiraki, I ;
Tanabe, F ;
Hobara, R ;
Kanagawa, T ;
Tanikawa, T ;
Matsuda, I ;
Petersen, CL ;
Hansen, TM ;
Boggild, P ;
Grey, F .
SURFACE REVIEW AND LETTERS, 2003, 10 (06) :963-980
[5]   Transport at surface nanostructures measured by four-tip STM [J].
Hasegawa, S ;
Shiraki, I ;
Tanabe, F ;
Hobara, R .
CURRENT APPLIED PHYSICS, 2002, 2 (06) :465-471
[6]   Dysprosium silicide nanowires on Si(110) [J].
He, Z ;
Stevens, M ;
Smith, DJ ;
Bennett, PA .
APPLIED PHYSICS LETTERS, 2003, 83 (25) :5292-5294
[7]   Endotaxial silicide nanowires [J].
He, ZA ;
Smith, DJ ;
Bennett, PA .
PHYSICAL REVIEW LETTERS, 2004, 93 (25) :256102-1
[8]   Epitaxial titanium silicide islands and nanowires [J].
He, ZA ;
Stevens, M ;
Smith, DJ ;
Bennett, PA .
SURFACE SCIENCE, 2003, 524 (1-3) :148-156
[9]   SPECULAR BOUNDARY SCATTERING AND ELECTRICAL TRANSPORT IN SINGLE-CRYSTAL THIN-FILMS OF COSI2 [J].
HENSEL, JC ;
TUNG, RT ;
POATE, JM ;
UNTERWALD, FC .
PHYSICAL REVIEW LETTERS, 1985, 54 (16) :1840-1843
[10]   Anisotropy in conductance of a quasi-one-dimensional metallic surface state measured by a square micro-four-point probe method [J].
Kanagawa, T ;
Hobara, R ;
Matsuda, I ;
Tanikawa, T ;
Natori, A ;
Hasegawa, S .
PHYSICAL REVIEW LETTERS, 2003, 91 (03) :1-036805
123