Enhanced Room-Temperature Thermoelectric Performance of In-Doped ZnO:Al Thin Films through Prefabricated Layer Doping Method

被引：9

作者：

Zheng, Zhuang-Hao ^{[1
,2
]}

Fan, Ping ^{[1
]}

Luo, Jing-Ting ^{[2
]}

Liang, Guang-Xing ^{[2
]}

Zhang, Dong-Ping ^{[1
]}

机构：

[1] Shenzhen Univ, Inst Thin Film Phys & Applicat, Coll Phys Sci & Technol, Shenzhen 518060, Peoples R China

[2] Shenzhen Key Lab Sensor Technol, Shenzhen 518060, Peoples R China

来源：

ELECTRONIC MATERIALS LETTERS | 2015年 / 11卷 / 03期

关键词：

In-doped AZO; thermoelectric thin film; thermoelectric properties; ZINC-OXIDE; CERAMICS; MERIT; DISTORTION; FIGURES; POWER;

D O I：

10.1007/s13391-015-4441-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, AZO thin films prepared by direct current reactive magnetron sputtering using a Zn-Al alloy target and In with varied content were doped through the prefabricated layer doping method in order to optimize their thermoelectric properties. The effects of In content on the room temperature microstructure and thermoelectric properties of the AZO thin films were investigated. It was found that the absolute value of the Seebeck coefficient of the thin films increases stably after In doping and reaches 153 mu V.K-1 when the In content is 0.71%. Though the electrical conductivity of In-doped thin films is smaller than those of the un-doped films, the power factor of the thin films shows a significant increase after In doping with a maximum value of 2.22 x 10(-4) W.m(-1) K-2, which is several times that of the un-doped films.

引用

页码：429 / 434

页数：6

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