Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes

被引：65

作者：

Hiyoshi, Toru ^{[1
]}

Hori, Tsutomu ^{[1
,2
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
,3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Hitachi Met Ltd, NEOMAX Co, Magnet Mat Res Lab, Osaka 6180013, Japan

[3] Kyoto Univ, Pholon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

基金：

日本学术振兴会;

关键词：

bevel mesa; junction termination extension (JTE); PiN; silicon carbide (SiC); simulation;

D O I：

10.1109/TED.2008.926643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Designing and fabrication of 10-kV 4H-SiC PiN diodes with an improved junction termination structure have been investigated. An improved bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve a high breakdown voltage (>= 10 kV). The improved bevel mesa structure, nearly a vertical sidewall at the edge of the p-n junction and a gradual slope at the mesa bottom, has been fabricated by reactive ion etching. The effectiveness of the improved bevel mesa structure has been experimentally demonstrated. The JTE region has been optimized by device simulation, and the JTE dose dependence of the breakdown voltage has been compared with experimental results. A 4H-SiC PiN diode with a JTE dose of 1.1 x 10(13) cm(-1) has exhibited a high blocking voltage of 10.2 kV. The locations of electric field crowding and breakdown are also discussed.

引用

页码：1841 / 1846

页数：6

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