Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

被引：19
|
作者：
Ragnarsson, LÅ [1 ]
Guha, S [1 ]
Bojarczuk, NA [1 ]
Cartier, E [1 ]
Fischetti, MV [1 ]
Rim, K [1 ]
Karasinski, J [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 10期
关键词：
aluminum oxide; effective mobility; gate dielectric; high-k; remote-polar-phonon scattering;
D O I：
10.1109/55.954921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-effective mobilities are demonstrated in AI(2)O(3) based n-channel MOSFETs with AI gates. The AI(2)O(3) was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm(2)/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
引用
收藏
页码：490 / 492
页数：3
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